In Situ Treatment of a Scanning Gate Microscopy Tip

摘要

In scanning gate microscopy, where the tip of a scanning force microscope isused as a movable gate to study electronic transport in nanostructures, theshape and magnitude of the tip-induced potential are important for theresolution and interpretation of the measurements. Contaminations picked upduring topography scans may significantly alter this potential. We present anin situ high-field treatment of the tip that improves the tip-inducedpotential. A quantum dot was used to measure the tip-induced potential.